 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 3SK298 Silicon N-Channel Dual Gate MOS FET REJ03G0817-0300 (Previous ADE-208-390A) Rev.3.00 Aug.10.2005 Application UHF / VHF RF amplifier Features * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is "ZP-" Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Rev.3.00 Aug 10, 2005 page 1 of 8 3SK298 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 8 8 25 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Gate 1 to source cutoff voltage Gate 2 to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS IG1SS IG2SS IDS(on) VG1S(off) VG2S(off) |yfs| Ciss Coss Crss PG NF PG NF NF Min 12 8 8 -- -- 0.5 0 0 16 2.4 0.8 -- 22 -- 12 -- -- Typ -- -- -- -- -- -- -- -- 20 2.9 1.0 0.023 25 1.0 15 3.2 2.8 Max -- -- -- 100 100 10 +1.0 +1.0 -- 3.4 1.4 0.04 -- 1.8 -- 4.5 3.5 Unit V V V nA nA mA V V mS pF pF pF dB dB dB dB dB Test conditions ID = 200 A , VG1S = -3 V, VG2S = -3 V IG1 = 10 A, VG2S = VDS = 0 IG2 = 10 A, VG1S = VDS = 0 VG1S = 6 V, VG2S = VDS = 0 VG2S = 6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.75 V, VG2S = 3 V VDS = 10 V, VG2S = 3 V, ID = 100 A VDS = 10 V, VG1S = 3 V, ID = 100 A VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 200 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 60 MHz Rev.3.00 Aug 10, 2005 page 2 of 8 3SK298 Maximum Channel Power Dissipation Curve Pch (mW) 200 20 VG2S = 3 V 1.4 V Pulse test Typical Output Characteristics (mA) 16 1.2 V 150 Channel Power Dissipation ID 12 1.0 V Drain current 100 8 0.8 V 0.6 V VG1S = 0.4 V 50 4 0 50 100 150 200 0 2 4 6 8 10 Ambient Temperature Ta (C) Drain to source voltage VDS (V) Drain Current vs. Gate1 to Source Voltage 20 3.0 V 2.0 V 1.5 V VDS = 6 V Drain Current vs. Gate2 to Source Voltage 20 3.0 V VDS = 6 V 2.0 V 2.5 V 1.5 V 1.0 V Pulse test (mA) 16 2.5 V (mA) ID Drain current Pulse test 16 ID 12 1.0 V 12 Drain current 8 8 4 VG2S = 0.5 V 0 1 2 3 4 5 4 VG1S = 0.5 V 1 2 3 4 5 0 Gate1 to source voltage VG1S (V) Gate2 to source voltage VG2S (V) (mS) Forward Transfer Admittance vs. Gate1 to Source Voltage 30 VDS = 6 V f = 1 kHz 24 VG2S = 3.0 V 2.5 V 2.0 V 1.5 V 6 1.0 V 0.5 V 0 0.4 0.8 1.2 1.6 2.0 30 Power Gain vs. Drain Current |yfs| (dB) PG Power gain 24 Forward transfer admittance 18 18 12 12 VDS = 6 V VG2S = 3 V f = 200 MHz 2 5 10 20 6 0 1 Gate1 to source voltage VG1S (V) Drain current ID (mA) Rev.3.00 Aug 10, 2005 page 3 of 8 3SK298 Noise Figure vs. Drain Current 3.0 VDS = 6 V VG2S = 3 V f = 200 MHz Power Gain vs. Drain to Source Voltage 30 NF (dB) PG (dB) Power gain 2.4 24 Noise figure 1.8 18 1.2 12 VG2S = 3 V ID = 10 mA f = 200 MHz 2 4 6 8 10 0.6 0 1 6 2 5 10 20 0 Drain current ID (mA) Drain to source voltage VDS (V) Noise Figure vs. Drain to Source Voltage 2.0 20 Power Gain vs. Drain Current NF (dB) PG (dB) Power gain VG2S = 3 V ID = 10 mA f = 200 MHz 2 4 6 8 10 1.6 16 1.2 12 Noise figure 0.8 8 VDS = 6 V VG2S = 3 V f = 900 MHz 2 5 10 20 0.4 4 0 1 0 Drain to source voltage VDS (V) Drain current ID (mA) Noise Figure vs. Drain Current 10 VDS = 6 V VG2S = 3 V f = 900 MHz Power Gain vs. Drain to Source Voltage 20 8 PG (dB) Power gain NF (dB) 16 6 12 Noise figure 4 8 VG2S = 3 V ID = 10 mA f = 900 MHz 2 4 6 8 10 2 0 1 4 2 5 10 20 0 Drain current ID (mA) Drain to source voltage VDS (V) Rev.3.00 Aug 10, 2005 page 4 of 8 3SK298 Noise Figure vs. Drain to Source Voltage 5 NF (dB) Noise figure 4 3 2 VG2S = 3 V ID = 10 mA f = 900 MHz 2 4 6 8 10 1 0 Drain to source voltage VDS (V) Rev.3.00 Aug 10, 2005 page 5 of 8 3SK298 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 0.5 / div. 60 -150 -30 Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) Rev.3.00 Aug 10, 2005 page 6 of 8 3SK298 S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 ) Freq. (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 0.994 0.993 0.986 0.980 0.973 0.950 0.936 0.924 0.912 0.893 0.874 0.859 0.846 0.829 0.810 0.802 0.791 0.778 0.756 0.751 ANG. -5.8 -11.0 -16.8 -22.5 -27.8 -33.0 -38.3 -43.4 -48.0 -52.5 -57.3 -62.0 -66.1 -69.8 -74.2 -78.0 -81.6 -84.6 -88.5 -92.2 MAG. 2.04 2.02 2.00 1.98 1.94 1.90 1.86 1.83 1.77 1.71 1.67 1.64 1.58 1.50 1.46 1.44 1.38 1.34 1.30 1.26 S21 ANG. 173.6 167.4 161.5 155.5 149.6 142.6 137.1 131.6 126.8 121.0 115.5 111.1 106.7 102.1 97.1 92.7 88.9 84.2 80.2 75.9 MAG. 0.00116 0.00132 0.00229 0.00313 0.00427 0.00473 0.00536 0.00561 0.00562 0.00640 0.00638 0.00647 0.00667 0.00694 0.00661 0.00618 0.00622 0.00615 0.00576 0.00562 S12 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43.7 44.7 43.6 45.1 40.7 MAG. 0.993 0.993 0.991 0.990 0.987 0.985 0.982 0.979 0.975 0.971 0.967 0.964 0.960 0.955 0.952 0.948 0.944 0.940 0.935 0.932 S22 ANG. -2.2 -4.5 -6.4 -8.5 -10.5 -12.5 -14.4 -16.2 -18.2 -20.2 -22.0 -23.9 -25.8 -27.6 -29.4 -31.2 -33.2 -35.1 -36.8 -38.5 Rev.3.00 Aug 10, 2005 page 7 of 8 3SK298 Package Dimensions JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g D e2 b1 B B e A Q c E HE LP L Reference Symbol Dimension in Millimeters A xM A S A b L1 A3 e2 e A2 A l1 yS b b2 c c1 c A-A Section A1 S b1 b3 c1 l1 b5 e1 A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Min 0.8 0 0.8 0.25 0.35 Nom 0.1 1.8 1.15 1.8 0.3 0.1 0.2 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 b4 B-B Section Pattern of terminal position areas 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9 1.5 0.2 Ordering Information Part Name 3SK298ZP-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
Price & Availability of 3SK298ZP-TL-E
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |